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Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.87 - 91, 2004/10
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 85(13), p.2511 - 2513, 2004/09
Times Cited Count：11 Percentile：42.77(Physics, Applied)no abstracts in English
thin filmsLee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Kawakita, Shiro*; Imaizumi, Mitsuru*; Matsuda, Sumio*
Physica Status Solidi (A), 199(3), p.471 - 474, 2003/10
Times Cited Count：3 Percentile：21.33(Materials Science, Multidisciplinary)no abstracts in English
thin filmsLee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Oshima, Takeshi; Ito, Hisayoshi; Kawakita, Shiro*; Imaizumi, Mitsuru*; Matsuda, Sumio*; Yoshida, Akira*
Journal of Physics and Chemistry of Solids, 64(9-10), p.1887 - 1890, 2003/09
Times Cited Count：12 Percentile：53.9(Chemistry, Multidisciplinary)no abstracts in English
thin filmsFujita, Naoki*; Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi
Shingaku Giho, 102(77), p.79 - 84, 2002/05
no abstracts in English
/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12
Times Cited Count：7 Percentile：41.38(Physics, Condensed Matter)Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.
Oshima, Takeshi; Abe, Koji*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Nashiyama, Isamu*; Okada, Sohei
Applied Physics A, 71(2), p.141 - 145, 2000/10
no abstracts in English
Oshima, Takeshi; Morita, Yosuke; Nashiyama, Isamu; Kawasaki, Osamu*; Hisamatsu, Tadashi*; Matsuda, Sumio*; Nakao, Tetsuya*; Wako, Yoshihito*
JAERI-Conf 97-003, p.256 - 260, 1997/03
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials, p.143 - 148, 1992/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Morita, Yosuke; Nashiyama, Isamu*; *; Yoshida, Sadafumi*
EIM-89-129, p.1 - 10, 1989/12
no abstracts in English
